Q-VT Validation
In the core engine of Quantemol-VT lies a powerful Hybrid Plasma Equipment Model (HPEM) code. This code has a proven track of publications, validating it with experimental data and other methods. Here you can find some publications in relevant sections, which seem to be frequently asked about.
Model overview:
- Mark J Kushner “Hybrid modelling of low temperature plasmas for fundamental investigations and equipment design” 2009 J. Phys. D: Appl. Phys. 42 194013
ICP
- M Mao and A Bogaerts, “Investigating the plasma chemistry for the synthesis of carbon nanotubes/nanofibres in an inductively coupled plasma enhanced CVD system: the effect of different gas mixtures.” J. Phys. D: Appl. Phys. 43 (2010)
- Ken Tokashiki et al, “Synchronous Pulse Plasma Operation upon Source and Bias Radio Frequencys for Inductively Coupled Plasma for Highly Reliable Gate Etching Technology” Jpn. J. Appl. Phys. 48, 2009
- S Tinck et al “Simulation of an Ar/Cl2 inductively coupled plasma: study of the effect of bias, power and pressure and comparison with experiments” J. Phys. D: Appl. Phys. 41, 2008
- Shu-Xia Zhao et al “Gas ratio effects on the Si etch rate and profile uniformity in an inductively coupled Ar/CF4 plasma.” Plasma Sources Sci. Technol. 22, 2013
- Shu-Xia Zhao et al “The effect of F2 attachment by low-energy electrons on the electron behaviour in an Ar/CF4 inductively coupled plasma” Plasma Sources Sci. Technol. 21, 2012
- Shu-Xia Zhao et al “Dynamic investigation of mode transition in inductively coupled plasma with a hybrid model” J. Phys. D: Appl. Phys. 42, 2009
- Samer Banna et al, “Inductively Coupled Pulsed Plasmas in the Presence of Synchronous Pulsed Substrate Bias for Robust, Reliable, and Fine Conductor Etching” IEEE TRANSACTIONS ON PLASMA SCIENCE, VOL. 37, NO. 9, 2009
- Michael D Logue et al “Ion energy distributions in inductively coupled plasmas having a biased boundary electrode” Plasma Sources Sci. Technol. 21, 2012
- Ankur Agarwal et al “Recouping etch rates in pulsed inductively coupled plasmas” J. Vac. Sci. Technol. A 29, 2011
- S Tinck et al “Investigation of etching and deposition processes of Cl2/O2/Ar inductively coupled plasmas on silicon by means of plasma–surface simulations and experiments” J. Phys. D: Appl. Phys. 42, 2009
*Deposition*
- L. A. Gochberg et al “Direct Simulation Monte Carlo Simulations of Low Pressure Semiconductor Plasma Processing” AIP Conf. Proc. 1084, pp. 945-950; 2008
- S Tinck et al “Modeling Cl2/O2/Ar inductively coupled plasmas used for silicon etching: effects of SiO2 chamber wall coating” Plasma Sources Sci. Technol. 20, 2011
*ALD*
- S Tinck and A Bogaerts “Computer simulations of an oxygen inductively coupled plasma used for plasma-assisted atomic layer deposition“, Plasma Sources Sci. Technol. 20, 2011
High aspect ratio deep Silicon etching
- Juline Shoeb and Mark J. Kushner “Mechanisms for sealing of porous low-k SiOCH by combined He and NH3 plasma treatment”. J. Vac. Sci. Technol. A 29, 2011
CCP
- Mingmei Wang and Mark J. Kushner “High energy electron fluxes in dc-augmented capacitively coupled plasmas I. Fundamental characteristics” J. Appl. Phys. 107, 2010
- Yang Yang and Mark J Kushner “Modeling of dual frequency capacitively coupled plasma sources utilizing a full-wave Maxwell solver: I. Scaling with high frequency” Plasma Sources Sci. Technol. 19, 2010
- Yang Yang and Mark J Kushner “Modeling of dual frequency capacitively coupled plasma sources utilizing a full-wave Maxwell solver: II. Scaling with pressure, power and electronegativity” Plasma Sources Sci. Technol. 19, 2010
*Tool optimisation*
- Yang Yang and Mark J Kushner, “Graded conductivity electrodes as a means to improve plasma uniformity in dual frequency capacitively coupled plasma sources” J. Phys. D: Appl. Phys. 43, 2010
- Yang Yang and Mark J. Kushner “450 mm dual frequency capacitively coupled plasma sources: Conventional, graded, and segmented electrodes” J. Appl. Phys. 108, 113306, 2010
Magnetron Sputtering
- Da Zhang, Phillip J. Stout, and Peter L. G. Ventzek “Plasma and process characterization of high power magnetron physical vapor deposition with integrated plasma equipment—feature profile model” Journal of Vacuum Science & Technology A 21, 265, 2003
- Vivek Vyas and Mark J. Kushner “Scaling of hollow cathode magnetrons for ionized metal physical vapor deposition”, Journal of Vacuum Science & Technology A 24, 1955, 2006
Link to feature profile simulations
- K Van Laer et al “Etching of low-k materials for microelectronics applications by means of a N2/H2 plasma: modeling and experimental investigation” Plasma Sources Sci. Technol. 22, 2013
- Mingmei Wang and Mark J. Kushner, “High energy electron fluxes in dc-augmented capacitively coupled plasmas. II. Effects on twisting in high aspect ratio etching of dielectrics“, J. Appl. Phys. 107, 2010
- Stefan Tinck and Annemie Bogaerts “Modeling SiH4O2Ar inductively coupled plasmas used for filling of microtrenches in shallow trench isolation (STI)” Plasma Processes and Polymers, Vol 9, Issue 5, 2012
- Ankur Agarwala and Mark J. Kushner “Plasma atomic layer etching using conventional plasma equipment” J. Vac. Sci. Technol. A 27, 2009
- Juline Shoeb and Mark J. Kushner ”Mechanisms for plasma etching of HfO2 gate stacks with Si selectivity and photoresist trimming” J. Vac. Sci. Technol. A 27, 2009
- Yang Yang et al “Fluorine Plasma Treatments of Poly(propylene) Films, 2 – Modeling Reaction Mechanisms and Scaling” Plasma Process. Polym. 7, 2010
- Mingmei Wang and Mark J. Kushner “Modeling of implantation and mixing damage during etching of SiO2 over Si in fluorocarbon plasmas.” J. Vac. Sci. Technol. A 29 2011
- Juline Shoeb and Mark J. Kushner “Polymer Cleaning From Porous Low-k Dielectrics in He/H2 Plasmas.” IEEE TRANSACTIONS ON PLASMA SCIENCE, VOL. 39, NO. 11, 2011
*Wafer damage*
- Juline Shoeb et al “Damage by radicals and photons during plasma cleaning of porous low-k SiOCH. I. Ar/O2 and He/H2 plasmas” J. Vac. Sci. Technol. A 30, 2012